Investigating ripple pattern formation and damage profiles in Si and Ge induced by 100 keV Ar⁺ ion beam: a comparative study

• Indra Sulania,
• Harpreet Sondhi,
• Tanuj Kumar,
• Sunil Ojha,
• G R Umapathy,
• Ambuj Mishra,
• Ambuj Tripathi,
• Richa Krishna,
• Devesh Kumar Avasthi and
• Yogendra Kumar Mishra

Beilstein J. Nanotechnol. 2024, 15, 367–375, doi:10.3762/bjnano.15.33

• or range of damage profiles. Single-crystal materials (e.g. silicon and germanium) are composed of ordered arrays of atoms. If an ion beam is aligned to the atomic planes, most of the ions pass through the interplanar space and penetrate deep into the crystal. This can be used in channelling studies

• attributed to the accumulation of defects produced by Ar irradiation. The RBS-c spectra recorded for Si and Ge single-crystal samples pre-damaged with 100 keV Ar+ ions at RT are presented in Figure 5A and Figure 5B, respectively. The RBS spectrum recorded for the pristine sample in random orientation

Ion beam processing of DNA origami nanostructures

• Leo Sala,
• Agnes Zerolová,
• Violaine Vizcaino,
• Alain Mery,
• Alicja Domaracka,
• Hermann Rothard,
• Philippe Boduch,
• Dominik Pinkas and
• Jaroslav Kocišek

Beilstein J. Nanotechnol. 2024, 15, 207–214, doi:10.3762/bjnano.15.20

• the direction of the primary ion’s initial momentum. Hillock structures are usually formed upon such interaction with single-crystal materials [19], while craters and particle tracks form on polymeric thin films such as PMMA [20][21]. The dimensions of such features can be influenced by the interplay

In situ optical sub-wavelength thickness control of porous anodic aluminum oxide

• Aleksandrs Dutovs,
• Raimonds Popļausks,
• Oskars Putāns,
• Vladislavs Perkanuks,
• Aušrinė Jurkevičiūtė,
• Tomas Tamulevičius,
• Uldis Malinovskis,
• Iryna Olyshevets,
• Donats Erts and
• Juris Prikulis

Beilstein J. Nanotechnol. 2024, 15, 126–133, doi:10.3762/bjnano.15.12

• effective thickness below 300 nm could be produced with a few nanometers accuracy using single-crystal aluminum substrates. The results were confirmed using spectroscopic ellipsometry. The method for controlling the thickness during anodization eliminates the necessity of sample sectioning for electron

• absorption and photoluminescence characteristics of PAAO [38]. In order to achieve nanometer-scale thickness uniformity of the PAAO layers (Figure 4), it was necessary to use single-crystal aluminum substrates as starting material. In previous studies it was shown that anodization of polycrystalline aluminum

• samples at constant 40 V potential. Platinum cathode and single crystal Al(100) (MTI Corp. mcALa101010) anode were immersed in 0.3 M oxalic acid electrolyte inside a multiwalled container with a transparent optical window. The container was placed on a magnetic stirrer and cooled to 5 °C. The reflectance

TEM sample preparation of lithographically patterned permalloy nanostructures on silicon nitride membranes

• Joshua Williams,
• Michael I. Faley,
• Joseph Vimal Vas,
• Peng-Han Lu and
• Rafal E. Dunin-Borkowski

Beilstein J. Nanotechnol. 2024, 15, 1–12, doi:10.3762/bjnano.15.1

• -crystal SiC membranes is also feasible. Py epitaxial films were obtained on single-crystal MgO substrates [36] that have a lattice constant of 0.42 nm. It was demonstrated that the epitaxial SiC layer can serve as an excellent mask material for KOH etching of Si [37]. However, etching to a crystalline

• development is to use a different membrane, for example SiC (lattice constant a = 0.435 nm), since it can grow as a single-crystalline layer and ensure epitaxial sample growth on top of it, for example, the growth of NbN (a = 0.439 nm) with a lattice mismatch of 1%. Epitaxial growth of Py films on single

Spatial mapping of photovoltage and light-induced displacement of on-chip coupled piezo/photodiodes by Kelvin probe force microscopy under modulated illumination

• Zeinab Eftekhari,
• Nasim Rezaei,
• Hidde Stokkel,
• Jian-Yao Zheng,
• Andrea Cerreta,
• Ilka Hermes,
• Minh Nguyen,
• Guus Rijnders and
• Rebecca Saive

Beilstein J. Nanotechnol. 2023, 14, 1059–1067, doi:10.3762/bjnano.14.87

• × 2.8) and (1.4 × 1.2) mm2 labeled as A, B, C, and D, respectively. In the process of fabrication, a 100 nm thick layer of LNO as the bottom electrode was first deposited, using pulsed laser deposition (PLD) technique, on a single crystal silicon wafer. Then, an 850 nm lead barium zirconia titanate

Low temperature atomic layer deposition of cobalt using dicobalt hexacarbonyl-1-heptyne as precursor

• Mathias Franz,
• Mahnaz Safian Jouzdani,
• Lysann Kaßner,
• Marcus Daniel,
• Frank Stahr and
• Stefan E. Schulz

Beilstein J. Nanotechnol. 2023, 14, 951–963, doi:10.3762/bjnano.14.78

• solution. The attached RF generator operates at 13.56 MHz, creating a direct capacitively coupled plasma, if required. The system includes an integrated iSE spectroscopic ellipsometer of J.A. Woollam Co. for inline thickness measurements. Basic materials and procedure The whole study was done using single

• crystal 200 mm silicon (100) wafers with a pre-coated thermal SiO2 film of 100 nm thickness. As precursor for all depositions dicobalt hexacarbonyl-1-heptyne [Co2(CO)6HC≡CC5H11] was used. The precursor was synthesised according to Georgi et al. [23] and filled to a common 200 mL stainless steel bubbler

Thermal transport in kinked nanowires through simulation

• Alexander N. Robillard,
• Graham W. Gibson and
• Ralf Meyer

Beilstein J. Nanotechnol. 2023, 14, 586–602, doi:10.3762/bjnano.14.49

• . Systems are simulated using open boundary conditions, that is, there is no use of periodic boundary conditions for these systems. The kinked wires used in MD are shaped from a single crystal oriented so that the straight portions follow along the [100] direction. These systems are build from cylindrical

Bending and punching characteristics of aluminum sheets using the quasi-continuum method

• Man-Ping Chang,
• Shang-Jui Lin and
• Te-Hua Fang

Beilstein J. Nanotechnol. 2022, 13, 1303–1315, doi:10.3762/bjnano.13.108

• friction behaviors of different models [52]. Moreover, the QC method based on the embedded-atom method (EAM) potential was adopted to observe the fatigue crack growth and expansion characteristics of single-crystal metals under cyclic loading processes. The results showed that after compressive or shear

• , the effect of crystal orientation on the materials will be firstly considered. The mechanical properties of single-crystal materials can be strongly affected by the crystal orientation [56], such as the elastic stress [57], thermomechanical fatigue behavior [58], and the dislocation effect of

• close-packed surface of the single-crystal Al workpiece, respectively [60]. The thickness of the Al workpiece was set to 10 Å and the clearance was 5 Å. Figure 2 exhibits the shear stress–displacement curve of O1, O2, and O3 during the nano-punching process. Firstly, it can be observed that a continuous

A cantilever-based, ultrahigh-vacuum, low-temperature scanning probe instrument for multidimensional scanning force microscopy

• Hao Liu,
• Zuned Ahmed,
• Sasa Vranjkovic,
• Manfred Parschau,
• Andrada-Oana Mandru and
• Hans J. Hug

Beilstein J. Nanotechnol. 2022, 13, 1120–1140, doi:10.3762/bjnano.13.95

Self-assembly of C₆₀ on a ZnTPP/Fe(001)–p(1 × 1)O substrate: observation of a quasi-freestanding C₆₀ monolayer

• Guglielmo Albani,
• Michele Capra,
• Alessandro Lodesani,
• Alberto Calloni,
• Gianlorenzo Bussetti,
• Marco Finazzi,
• Franco Ciccacci,
• Alberto Brambilla,
• Lamberto Duò and
• Andrea Picone

Beilstein J. Nanotechnol. 2022, 13, 857–864, doi:10.3762/bjnano.13.76

• in UHV on a MgO(001) single crystal [48]. The Fe(001)–p(1 × 1)O surface was prepared by using the following procedure: the clean Fe substrate was exposed to 30 Langmuir of molecular oxygen at a pressure of = 2 × 10−7 mbar and subsequently annealed at about 700 °C for 5 min. Porphyrins were

Ultrafast signatures of magnetic inhomogeneity in Pd_1−xFe_x (x ≤ 0.08) epitaxial thin films

• Andrey V. Petrov,
• Sergey I. Nikitin,
• Lenar R. Tagirov,
• Amir I. Gumarov,
• Igor V. Yanilkin and
• Roman V. Yusupov

Beilstein J. Nanotechnol. 2022, 13, 836–844, doi:10.3762/bjnano.13.74

• paramagnetic (PM) regions coexist, with the latter collapsing upon an increase of the iron content. Experimental The samples for the studies were thin epitaxial films of Pd1−xFex with a nominal iron content of x = 0 (pure Pd), 0.038, 0.062, and 0.080 grown on single-crystal MgO(001) substrates by molecular

Optimizing PMMA solutions to suppress contamination in the transfer of CVD graphene for batch production

• Chun-Da Liao,
• Andrea Capasso,
• Tiago Queirós,
• Telma Domingues,
• Fatima Cerqueira,
• Nicoleta Nicoara,
• Jérôme Borme,
• Paulo Freitas and
• Pedro Alpuim

Beilstein J. Nanotechnol. 2022, 13, 796–806, doi:10.3762/bjnano.13.70

• of both a graphene film and a single crystal (Figure 2a,b). The area analysis (650 × 500 µm2) revealed less than ten residues, indicating an extremely clean transfer process. B2 PMMA allowed for up to six transfer cycles, representing an intermediate, yet acceptable, mechanical support. This proves

• ) and 1860 Ω (FWHM = 567 Ω), respectively, proving that the optimized PMMA mixture enables the production of reproducible arrays of electronic devices with consistent properties. Experimental Graphene growth Single-crystal and large-area graphene were obtained on Cu foil via catalyst-assisted growth in

• -area film and (b) a single crystal. (c) Raman spectra taken at the positions indicated in (b). Raman mapping of (d) I(D)/I(G), (e) I(2D)/I(G), and (f) FWHM(2D), and (g–i) corresponding statistics. Statistical analysis of the Raman spectra of transistors prepared with transfers using PMMA mixtures with

Recent advances in nanoarchitectures of monocrystalline coordination polymers through confined assembly

• Lingling Xia,
• Qinyue Wang and
• Ming Hu

Beilstein J. Nanotechnol. 2022, 13, 763–777, doi:10.3762/bjnano.13.67

• connected channels were fully occupied by one single crystal (Figure 2). The fronts of the single crystal grew along these channels, leading to single crystals with several branches, such as comb-shaped single crystals, as investigated by optical microscopy. It was found that when the crystal size is

• smaller than the channel size, the crystals were polyhedra. When the channel was fully filled by a crystal, chemical gradient, physical constraints, and absence of advection changed the properties of the crystal according to reaction–diffusion theory. The fact that one single crystal can occupy several

• connected branches suggests that the channel walls can be encapsulated by single crystals. This is a basis for the formation of composites with a single crystal matrix. When solid networks are immersed into a solution of coordination polymers, the connected space among the networks can be seen as connected

A non-enzymatic electrochemical hydrogen peroxide sensor based on copper oxide nanostructures

• Irena Mihailova,
• Vjaceslavs Gerbreders,
• Marina Krasovska,
• Eriks Sledevskis,
• Valdis Mizers,
• Andrejs Bulanovs and
• Andrejs Ogurcovs

Beilstein J. Nanotechnol. 2022, 13, 424–436, doi:10.3762/bjnano.13.35

• obtain nanostructures with a large active surface area, which ensures efficient electron charge transfer between CuO nanostructures and the copper substrate due to the formation of high-density, single-crystal nanopetals. Nanostructures are produced in one step, and can be directly used as sensor

Electrostatic pull-in application in flexible devices: A review

• Teng Cai,
• Yuming Fang,
• Yingli Fang,
• Ruozhou Li,
• Ying Yu and
• Mingyang Huang

Beilstein J. Nanotechnol. 2022, 13, 390–403, doi:10.3762/bjnano.13.32

• can greatly simplify the circuit volume of traditional PN junctions and increase the circuit integration. NWs-NEM switches Single-crystal nanowires are excellent candidates for NEM switches due to their uniform chemical and physical structure, and good reproducibility of structure and composition

• to the removal of grain boundaries, the single-crystal GR devices are four times more capable of handling current than polycrystalline GR devices. Shen et al. [71] prepared GR ESD switches and analyzed their electrical characteristics and reliability. The switch did work only once. Therefore, ESD

Controllable two- and three-state magnetization switching in single-layer epitaxial Pd_1−xFe_x films and an epitaxial Pd_0.92Fe_0.08/Ag/Pd_0.96Fe_0.04 heterostructure

• Igor V. Yanilkin,
• Amir I. Gumarov,
• Gulnaz F. Gizzatullina,
• Roman V. Yusupov and
• Lenar R. Tagirov

Beilstein J. Nanotechnol. 2022, 13, 334–343, doi:10.3762/bjnano.13.28

• epitaxial thin-film heterostructure Pd0.92Fe0.08(20 nm)/Ag(20 nm)/Pd0.96Fe0.04(20 nm) were grown in an ultrahigh-vacuum (UHV) apparatus (SPECS, Germany) by molecular beam deposition. Epi-polished MgO(100) single-crystal plates (Crystal GmbH, Germany) were used as substrates. The deposition routine and

Topographic signatures and manipulations of Fe atoms, CO molecules and NaCl islands on superconducting Pb(111)

• Carl Drechsel,
• Philipp D’Astolfo,
• Jung-Ching Liu,
• Thilo Glatzel,
• Rémy Pawlak and
• Ernst Meyer

Beilstein J. Nanotechnol. 2022, 13, 1–9, doi:10.3762/bjnano.13.1

• Sample preparation The Pb(111) single crystal, purchased from Mateck GmbH, was cleaned by several sputtering and annealing cycles in ultra-high vacuum (UHV). CO dosing on the cold substrate was done in the microscope chamber by increasing the pressure via a leak valve up to p ≈ 1 × 10−7 mbar for one

Design aspects of Bi₂Sr₂CaCu₂O_8+δ THz sources: optimization of thermal and radiative properties

• Mikhail M. Krasnov,
• Natalia D. Novikova,
• Roger Cattaneo,
• Alexey A. Kalenyuk and
• Vladimir M. Krasnov

Beilstein J. Nanotechnol. 2021, 12, 1392–1403, doi:10.3762/bjnano.12.103

• sources. In this work we analyze thermal and radiative properties of such devices based on mesa structures of a layered high-temperature superconductor Bi2Sr2CaCu2O8+δ. Two types of devices are considered containing either a conventional large single crystal or a whisker. We perform numerical simulations

• , to handle self-heating, and impedance matching microwave antennas, to improve RPE. In this work we analyze design aspects of THz sources based on Bi-2212 mesa structures. Thermal and radiative properties are studied for two types of devices containing either a conventional large single crystal or a

• using a conventional single crystal. Figure 1c shows sketches of both devices. Bi-2212 whiskers have typical aspect ratios of 100:10:1 in the a, b, and c crystallographic directions, respectively [42]. Our whiskers have typical dimensions of several hundreds of micrometers along a, 20–40 μm along b, and

Morphology-driven gas sensing by fabricated fractals: A review

• Vishal Kamathe and
• Rupali Nagar

Beilstein J. Nanotechnol. 2021, 12, 1187–1208, doi:10.3762/bjnano.12.88

• of ZnO dendrites and single-crystal ZnO dendrites up to the macroscale [77]. These were synthesized via a vapor-phase transport method at 930 °C using a copper catalyst. Figure 16a and Figure 16b show, respectively, a schematic and a SEM image of the ZnO dendrite gas sensor device. The ZnO dendrites

First-principles study of the structural, optoelectronic and thermophysical properties of the π-SnSe for thermoelectric applications

• Muhammad Atif Sattar,
• Najwa Al Bouzieh,
• Maamar Benkraouda and
• Noureddine Amrane

Beilstein J. Nanotechnol. 2021, 12, 1101–1114, doi:10.3762/bjnano.12.82

• the next generation of electronic and photonic systems [35][36]. The orthorhombic α-SnSe, an indirect bandgap (0.9 eV) semiconductor, has been an immense research topic in the TE field since the highest ZT value of ≈2.6 at 923 K was reported in the p-type single crystal along the b axis [1]. The n

• -type Bi-doped SnSe single crystal also gives a high ZT value of 2.2 (along the b axis) at 773 K [37]. Motivated by these prominent TE performances, which were due to ultra-low thermal conductivity along with modest electrical transport properties, SnSe-based TE alloys have drawn considerable attention

An overview of microneedle applications, materials, and fabrication methods

• Zahra Faraji Rad,
• Philip D. Prewett and
• Graham J. Davies

Beilstein J. Nanotechnol. 2021, 12, 1034–1046, doi:10.3762/bjnano.12.77

• complex multistep processes and expensive tools developed for the microelectronics industry [74][85], as introduced already. Subtractive technologies, in the form of wet and dry etching, are most frequently used. In wet etching, a single crystal silicon wafer is immersed in baths of various chemical

• after 2–3 weeks [95]. In other work, hollow pyramidal silicon dioxide microneedle arrays, with heights of 150–200 μm, were made by oxidising microporous silicon produced by a combination of wet etching and electrochemistry [96]. Porous silicon microneedles may overcome the brittle properties of single

• crystal silicon and provide a degree of biodegradability, but their fabrication methods are relatively complex and involve the use of toxic and corrosive chemicals like HF. In addition, the mechanical properties of materials, including Young’s modulus, significantly degrade with increasing porosity. (Note

The role of convolutional neural networks in scanning probe microscopy: a review

• Ido Azuri,
• Irit Rosenhek-Goldian,
• Neta Regev-Rudzki,
• Georg Fantner and
• Sidney R. Cohen

Beilstein J. Nanotechnol. 2021, 12, 878–901, doi:10.3762/bjnano.12.66

A review of defect engineering, ion implantation, and nanofabrication using the helium ion microscope

• Frances I. Allen

Beilstein J. Nanotechnol. 2021, 12, 633–664, doi:10.3762/bjnano.12.52

• properties of helium ion-irradiated silicon nanopillars have since been investigated as well, observing a softening behavior upon amorphization and swelling [89]. Helium ion irradiation of single-crystal diamond nanopillars has revealed an orientation dependence of the irradiation damage and associated

• the beam energy and current, the growth of single-crystal nanowires was also shown. This is reminiscent of nanowire growth by the vapor–solid–liquid mechanism, except here the process was performed at room temperature and without the flow of a gaseous precursor. In the HIM case it was proposed that

Impact of GaAs(100) surface preparation on EQE of AZO/Al₂O₃/p-GaAs photovoltaic structures

• Piotr Caban,
• Rafał Pietruszka,
• Jarosław Kaszewski,
• Monika Ożga,
• Bartłomiej S. Witkowski,
• Krzysztof Kopalko,
• Piotr Kuźmiuk,
• Katarzyna Gwóźdź,
• Ewa Płaczek-Popko,
• Krystyna Lawniczak-Jablonska and
• Marek Godlewski

Beilstein J. Nanotechnol. 2021, 12, 578–592, doi:10.3762/bjnano.12.48

• for aluminum-doped zinc oxide). Experimental GaAs surface treatment We used lightly Zn-doped GaAs single-crystal (100) wafer (p = 6.8 × 1016 cm−3, ρ = 3.2 × 10−1 Ω·cm, μ ≤ 225 cm2/Vs, d = 400 μm) (fabricated at the Institute of Electronic Materials Technology, ITME) as the substrate. Before starting

Local stiffness and work function variations of hexagonal boron nitride on Cu(111)

• Abhishek Grewal,
• Yuqi Wang,
• Matthias Münks,
• Klaus Kern and
• Markus Ternes

Beilstein J. Nanotechnol. 2021, 12, 559–565, doi:10.3762/bjnano.12.46

• acquisition. Sample preparation: A Cu(111) single crystal (MaTeck GmbH) is cleaned via repeated cycles of Ar-ion sputtering at room temperature followed by annealing to 1020 K in an ultrahigh-vacuum preparation chamber. A partial layer of h-BN is grown by chemical vapour deposition by heating the Cu(111